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H7P1002DL - Silicon P Channel MOS FET High Speed Power Switching

Features

  • Low on-resistance RDS(on) = 85 mΩ typ. www. DataSheet4U. com.
  • Low drive current.
  • 4.5 V gate drive device can driven from 5 V source Outline.

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Datasheet Details

Part number H7P1002DL
Manufacturer Renesas Technology
File Size 153.89 KB
Description Silicon P Channel MOS FET High Speed Power Switching
Datasheet download datasheet H7P1002DL Datasheet
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Full PDF Text Transcription

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H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features • Low on-resistance RDS(on) = 85 mΩ typ. www.DataSheet4U.com • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain H7P0601DS 1 2 3 S H7P0601DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
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